The patent, United States Patent No. 12,490,571, titled Thin-film sensor and method of fabricating thin-film sensor, was formally granted on 2 December 2025, following an application filed in 2022. This accomplishment reinforces the Qwaqwa Campus' reputation as a burgeoning hub for high-tech innovation and international scientific excellence.
Breakthrough in cryogenic technology

The patented invention introduces a novel thin-film sensor designed for extreme environments – specifically cryogenic applications. The sensor utilises an innovative architecture where an active material, graphitic carbon nitride, is ‘sandwiched’ between semiconductor layers (silicon) and specialised electrical contacts made of aluminium and gold.

Unlike standard sensors that often fail or become unstable at ultra-low temperatures, this UFS-linked technology is engineered to function effectively in a vast temperature range – from 50 Kelvin (-223°C) up to 500 Kelvin (227°C). This makes it an invaluable tool for aerospace exploration, advanced medical imaging (MRI), and quantum computing industries.
Qwaqwa Campus: Leading on the global stage

The granting of a US patent is a rare and rigorous process, often taking years of vetting to prove that a technology is truly ‘novel’ and ‘non-obvious’ to the global scientific community.

"This is another rare event for the University of the Free State," noted Prof Richard Ocaya. "The Qwaqwa Campus is leading on many fronts, proving that world-class innovation is not bound by geography. Our researchers are providing solutions that resonate from the Free State to the global market."
Practical applications and future impact

The sensor’s ability to operate in both ‘forward and reverse bias’ and its improved stability at cryogenic temperatures opens the door for several commercial applications:

Space Exploration: Monitoring sensitive equipment in the freezing temperatures of deep space.

Energy: Supervising superconducting magnets used in fusion energy and high-speed maglev trains.
Scientific Research: Precise thermal sensing in laboratory environments.
 

The team behind the patent includes Prof Richard O Ocaya from the UFS Qwaqwa Campus, whose expertise in electronic properties and instrumentation was pivotal to the development of this device. The project also involved international collaboration with researchers such as Abdullah G Al-Sehemi and Fahrettin Yakuphanoglu, showcasing the power of global scientific partnerships.

 
A beacon of excellence

This achievement serves as a powerful inspiration for students and staff on the Qwaqwa Campus. It highlights the university’s commitment not only to teaching, but also to creating original, protectable intellectual property that can change the world.

As the UFS continues to expand its research footprint, this US patent stands as a testament to the fact that the Qwaqwa Campus is a formidable force in the ‘global knowledge economy.’

Patent details at a glance:

Patent number: US 12,490,571 B2

Grant date: 2 December 2025

Lead researcher (UFS): Prof Richard O Ocaya

Core technology: High-stability thin-film sensors for cryogenic use.
Materials: Graphitic carbon nitride, silicon, gold, aluminium.